英语高手帮忙翻译一下
A conceptually similar structure was first proposed and patented by Lilienfeld and Heil in 1930,but was not successfully demonstrated until 1960.The main
technological problem was the control and reduction of the surface states at the interface between the oxide and the semiconductor.
Initially it was only possible to deplete an existing n-type channel by applying a negative voltage to the gate.Such devices have a conducting channel
between source and drain even when no gate voltage is applied and called"depletion-mode"devices.
A reduction of the surface states enabled the fabrication of devices which do not have a conduction channel unless a positive voltage is applied.Such
devices are refered to as "enhancement-mode" device.The electrons atthe oxide-semiconductor interface are concentrated in a thin(~10 nm thick)"inversion"
layer.By now,most MOSFETs are "enhancement-mode"device.
参考答案:1930 年一个概念性地相似的结构由Lilienfeld 和Heil 提议和第一次给予了专利, 但成功地未被展示直到1960.The 主要技术问题是表面状态的控制和减少在接口在氧化物和半导体之间。最初地它是只可能耗尽一种现有的n 类型渠道由适用于消极电压gate.Such 设备有一种举办的渠道在来源和流失之间既使当门电压不是应用和called"depletion-mode"devices 。表面状态的减少使能没有传导渠道的生产设备除非正面电压是applied.Such 设备是refered 对和"改进方式" atthe 氧化物半导体接口现在被集中在thin(~10 nm thick)"inversion" layer.By 的device.The 电子, 多数MOSFETs "改进mode"device 。